| 论文编号: | 1725110120160338 |
| 论文题目: | Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance |
| 作者: | 丁芃 |
| 刊物名称: | SOLID-STATE ELECTRONICS |
| 年: | 2016 |
| 期: | 123 |
| 页: | 1 |
| 联系作者: | 金智 |
| 论文编号: | 1725110120160338 |
| 论文题目: | Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance |
| 作者: | 丁芃 |
| 刊物名称: | SOLID-STATE ELECTRONICS |
| 年: | 2016 |
| 期: | 123 |
| 页: | 1 |
| 联系作者: | 金智 |
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