| 论文编号: | 1725110120140041 |
| 第一作者所在部门: | 一室二组 |
| 论文题目: | Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design |
| 作者: | 张文亮 |
| 刊物名称: | IEEE ELECTRON DEVICE LETTERS |
| 年: | 2014 |
| 卷: | 35 |
| 期: | 12 |
| 页: | 1281 |
| 联系作者: | 张文亮 |
| 影响因子: | 3.023 |
科研产出