| 论文题目: | 200 nm gate-length GaAs-based MHEMT devices by electron beam lithography |
| 作者: | XU JingBo, ZHANG HaiYing, WANG WenXin, LIU Liang, LI Ming, FU XiaoJun, NIU JieBin ，YE TianChun |
| 刊物名称: | Chinese Science Bulletin |
| 年: | 2008 |
| 卷: | 53 |
| 期: | 22 |
| 页: | 3585-3589 |
| 联系作者: | XU JingBo |
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