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论文题目 英文论文题目 作者 刊物名称 年卷期页
"Process Impact and Design Optimization on the ECS Transactions 2011 :
兼容多标准的高效运动补偿新结构 Hardware Efficient Motion Compensation Architecture for Multi-standard Video Decoder 电子与信息学报 2011 :
Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications IEEE ELECTRON DEVICE LETTERS 2011 :
Characteristics of HfSiAlON Gate Dielectric Prepared by Physical Vapor Deposition ECS Transactions 2011 :
The fabrication and dry etching of poly-Si/TaN/Mo gate stack in the metal inserted poly-Si stacks Structure Microelectronic Engineering 2011 :
Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal–oxide–semiconductor devices Journal of Semiconductors 2011 :
关于源/漏与背栅共享接触的FDSOI-CMOS器件仿真 Simulations of FDSOI CMOS with Sharing Contact between Source/Drain and Back Gate IEEE ELECTRON DEVICE LETTERS 2011 :
利用kelvin扫描探针显微镜研究石墨烯场效应晶体管的非对称输运特性 "Understanding Asymmetric Transportation Behavior IEDM会议 2011 :
超低 κ介质材料低损伤等离子体去胶工艺进展 Process Progress of Low-Damage Plasma Stripping on Ultralow-κ Dielectric Materials 微纳电子技术 2011 :
Polypropylene films modified by air plasma and feather keratin graft Surface & Coatings Technology 2011 206:506
Compact 2×2 MMI couplers with uneven splitting-ratios based on silicon nanowires Chinese Physics Letters 2011 28(8):
Uneven splitting-ratio 1×2 MMI splitters based on silicon wire waveguides Chinese Optics Letters 2011 9(8):
Ni–Al–O diffusion barrier layer for high-κ metal-oxide-semiconductor capacitor Thin Solid Films 2011 519(10):
14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications Solid State Electronics 2011 (64):63
The Annealing Kinetic Study on Germanium Surface Blistering by Hydrogen Implantation 2011 :
The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing Journal of The Electrochemical Society 2011 158(12):
A 6-GHz ROM suitable for DDFS application in GaAs HBT technology Chinese Science Bulletin 2011 56(21):
应用于直接数字频率合成器的6-GHz GaAs HBT 只读存储器 科学通报 2011 56(13):
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