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科研成果 |
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| 论文题目 |
英文论文题目 |
作者 |
刊物名称 |
年卷期页 |
| 5～22 GHz平坦高增益单片低噪声放大器 |
5～22 GHz Flat-High-gain Monolithic Integrated Low Noise Amplifier |
彭龙新; 李建平; 李拂晓; 杨乃彬; |
《固体电子学研究与进展》 |
2006 (2): |
| 具有容错功能的OLED有源驱动电路 |
Driving Circuit for AMOLED with Fault Tolerance |
李大勇,刘明,Wei Wang |
《半导体学报》 |
2007 28(9):1337-1340 |
| Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition |
Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition |
Tu Deyu,Ji Zhuoyu,Shang Liwei,Liu Ming,Wang Congshun,Hu Wenping |
The Chinese Journal of Semiconductors |
2008 29(1):50-54 |
| 增强型InGaP/AlGaAs/InGaAs PHEMT小信号等效电路参数的提取 |
Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT |
徐静波,尹军舰,张海英,李潇,刘亮,叶甜春 |
《半导体学报》 |
2007 28(3):361-364 |
| Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing |
Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing |
Li Zhi-Gang1, Long Shi-Bing1, Liu Ming1, Wang Cong-Shun1, Jia Rui1, Lv Jin2 and Shi Yi2 |
Chinese Phys. |
2007 16:795-798 |
| Design of a Novel Substrate-Free Double-Layer-Cantilever FPA Applied for Uncooled Optical-Readable Infrared Imaging System |
Design of a Novel Substrate-Free Double-Layer-Cantilever FPA Applied for Uncooled Optical-Readable Infrared Imaging System |
Shali Shi, Dapeng Chen, Binbin Jiao, Chaobo Li, Yi Ou, Yupeng Jing, Tianchun Ye, Qingchuan Zhang,Zheying Guo, Fengliang Dong, Zhengyu Miao, and Zhihui Duan |
IEEE SENSORS JOURNAL |
2007 7(12): |
| SOI Technology for Radio-FrequencyIntegrated-Circuit Applications |
SOI Technology for Radio-FrequencyIntegrated-Circuit Applications |
Rong Yang, Associate Member, IEEE, He Qian, Junfeng Li, Qiuxia Xu, Senior Member, IEEE,Chaohe Hai, and Zhengsheng Han |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2006 53(6): |
| A Short-Channel SOI RF Power LDMOS Technology With TiSi2 Salicide on Dual Sidewalls With Cutoff Frequency fT ～ 19.3 GHz |
A Short-Channel SOI RF Power LDMOS Technology With TiSi2 Salicide on Dual Sidewalls With Cutoff Frequency fT ～ 19.3 GHz |
Rong Yang, J. F. Li, H. Qian, G. Q. Lo, N. Balasubramanian, and D. L. Kwong |
IEEE ELECTRON DEVICE LETTERS |
2006 27(11): |
| 具有应变沟道及EOT 1.2nm高性能栅长22nm CMOS器件 |
High Performance Gate Length 22nm CMOS Device withStrained Channel and EOT 1.2nm |
徐秋霞,钱鹤,段晓峰,刘海华,王大海,韩郑生,刘明,陈宝钦,李海欧 |
《半导体学报》 |
2006 27(13):283-290 |
| 提高SOI器件和电路性能的研究 |
Study of Improved Performance of SOI Devices and Circuits |
海潮和,韩郑生,周小茵,赵立新,李多力,毕津顺 |
《半导体学报》 |
2006 27(13):322-327 |
| Circuit models applied to the design of a novel uncooled infrared focal plane array structure |
Circuit models applied to the design of a novel uncooled infrared focal plane array structure |
Shali Shi1, Dapeng Chen1, Chaobo Li1, Binbin Jiao1, Yi Ou1, Yupeng Jing1, Tianchun Ye1, Zheying Guo2, Qingchuan Zhang2 and Xiaoping Wu2 |
Meas. Sci. Technol. |
2007 18:1321-1326 |
| PDSOI nMOSFETs关态击穿特性 |
Off-State Breakdown Characteristics of PDSOI nMOSFETs |
毕津顺,海潮和 |
《半导体学报》 |
2007 28(1):14-18 |
| 基极微空气桥和发射极空气桥的InP/InGaAs HBT |
InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge |
于进勇,刘新宇,苏树兵,王润梅,徐安怀,齐鸣 |
《半导体学报》 |
2007 28(2):154-158 |
| 基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计 |
AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band |
姚小江,李宾,陈延湖,陈小娟,魏珂,李诚瞻,罗卫军,王晓亮,刘丹,刘果果,刘新宇 |
《半导体学报》 |
2007 28(4):514-517 |
| 面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器 |
A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications |
陈立强,张健,李志强,陈普锋,张海英 |
《半导体学报》 |
2007 28(6):823-828 |
| X波段低噪声放大器模块 |
X-Band Low Noise Amplifier Module |
郝明丽,刘训春,黄清华,杨成樾,武锦 |
《半导体学报》 |
2007 28(6):963-966 |
| 含InGaAsP的InP DHBT复合式集电区结构设计 |
Design of InGaAsP Composite Collector for InP DHBT |
程伟,金智,于进勇,刘新宇 |
《半导体学报》 |
2007 28(6):943-946 |
| GaN HEMT器件22元件小信号模型 |
A 22-Element Small-Signal Model of GaN HEMT Devices |
刘丹,陈晓娟,刘新宇,吴德馨 |
《半导体学报》 |
2007 28(9):1438-1442 |
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